Sellers, I.R., Liu, H.Y., Groom, K.M., Childs, D.T. , Robbins, D., Badcock, T.J., Hopkinson, M., Mowbray, D.J. and Skolnick, M.S. (2004) 1.3 µm InAs∕GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density. Electronics Letters, 40(22), p. 1412. (doi: 10.1049/el:20046692)
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Abstract
A high growth temperature step used for the GaAs spacer layer is shown to significantly improve the performance of 1.3 μm multilayer InAs/GaAs quantum-dot lasers. Extremely low room-temperature continuous-wave threshold current densities of 32.5 and 17 A/cm2 are achieved for a three-layer device with as-cleaved facets and high-reflectivity coated facets, respectively.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Childs, Dr David |
| Authors: | Sellers, I.R., Liu, H.Y., Groom, K.M., Childs, D.T., Robbins, D., Badcock, T.J., Hopkinson, M., Mowbray, D.J., and Skolnick, M.S. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Electronics Letters |
| Publisher: | The Institution of Engineering & Technology |
| ISSN: | 0013-5194 |
| ISSN (Online): | 1350-911X |
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