Quantum dot resonant cavity light emitting diode operating near 1300 nm

Gray, J.W., Childs, D. , Malik, S., Siverns, P., Roberts, C., Stavrinou, P.N., Whitehead, M., Murray, R. and Parry, G. (1999) Quantum dot resonant cavity light emitting diode operating near 1300 nm. Electronics Letters, 35(3), pp. 242-243. (doi:10.1049/el:19990114)

Full text not currently available from Enlighten.

Abstract

The first demonstration of resonant cavity enhancement of optical emission from an InAs-GaAs quantum dot light emitting diode is reported. For emission around 1300 nm efficiency enhancements of greater than 10 for low current injection and greater than 3 for higher current injection for light coupled into a multimode optical fibre are observed.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Childs, Dr David
Authors: Gray, J.W., Childs, D., Malik, S., Siverns, P., Roberts, C., Stavrinou, P.N., Whitehead, M., Murray, R., and Parry, G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Electronics Letters
Publisher:The Institution of Engineering & Technology
ISSN:0013-5194
ISSN (Online):1350-911X

University Staff: Request a correction | Enlighten Editors: Update this record