Liu, H.Y., Childs, D.T. , Badcock, T.J., Groom, K.M., Sellers, I.R., Hopkinson, M., Hogg, R.A., Robbins, D.J., Mowbray, D.J. and Skolnick, M.S. (2005) High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents. IEEE Photonics Technology Letters, 17(6), pp. 1139-1141. (doi: 10.1109/LPT.2005.846948)
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Abstract
The combination of high-growth-temperature GaAs spacer layers and high-reflectivity (HR)-coated facets has been utilized to obtain low threshold currents and threshold current densities for 1.3-μm multilayer InAs-GaAs quantum-dot lasers. A very low continuous-wave (CW) room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A/cm2 are achieved for a three-layer device with a 1-mm HR/HR cavity. For a 2-mm cavity, the CW threshold current density is as low as 17 A/cm2 for an HR/HR device. An output power as high as 100 mW is obtained for a device with HR/cleaved facets.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Childs, Dr David |
| Authors: | Liu, H.Y., Childs, D.T., Badcock, T.J., Groom, K.M., Sellers, I.R., Hopkinson, M., Hogg, R.A., Robbins, D.J., Mowbray, D.J., and Skolnick, M.S. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE Photonics Technology Letters |
| Publisher: | IEEE |
| ISSN: | 1041-1135 |
| ISSN (Online): | 1941-0174 |
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