High Performance Resonant Tunneling Diode Oscillators for THz Applications

Wang, J., Alharbi, K., Ofiare, A., Zhou, H., Khalid, A. , Cumming, D. and Wasige, E. (2015) High Performance Resonant Tunneling Diode Oscillators for THz Applications. In: 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), New Orleans, LA, USA, 11-14 Oct 2015, pp. 1-4. ISBN 9781479984947 (doi: 10.1109/CSICS.2015.7314509)

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This paper presents monolithic microwave integrated circuit (MMIC) resonant tunneling diode (RTD) oscillator with high performance: high power at high frequencies. The circuit topology employs two In0.53Ga0.47As/AlAs RTDs in parallel and each device is biased individually. These oscillators operate at 125GHz, 156GHz and 166 GHz with output power 0.34 mW, 0.24 mW and 0.17 mW respectively. These are highest power reported for RTD oscillators in D-band (110 GHz-170 GHz) frequency range. The phase noise of the RTD oscillators was characterized and is reported. This work demonstrates the circuit-based RTD oscillator design approach to increase the output power of RTD oscillators at millimeter-waves.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Zhou, Dr Haiping and Cumming, Professor David and Wang, Dr Jue and Khalid, Dr Ata-Ul-Habib and Ofiare, Dr Afesomeh
Authors: Wang, J., Alharbi, K., Ofiare, A., Zhou, H., Khalid, A., Cumming, D., and Wasige, E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
585691Compact MMIC Teraherz Sources in the 0.1-1 THz RangeEdward WasigeEngineering & Physical Sciences Research Council (EPSRC)EP/J019747ENG - ENGINEERING ELECTRONICS & NANO ENG