Maricar, M. I., Khalid, A.-u.-H. , Cumming, D. R.S. and Oxley, C.H. (2015) Design,characterization and fabrication of an In0.53Ga0.47As planar Gunn diode operating at millimeter waves. Journal of Terahertz Science and Electronic Information Technology, 13(3), pp. 507-510. (doi: 10.11805/TKYDA201503.0507)
Full text not currently available from Enlighten.
Abstract
This paper describes the design, characterization and fabrication of a planar In0.53Ga0.47 As based planar Gunn diode on an In P semi-insulating substrate. The planar Gunn diode was designed in Coplanar Waveguide(CPW) format with an active channel length and width of 4 μm and 120 μm respectively, and modeled using the Advanced Design System(ADS-2009) simulation package. The initial experimental measurements have given a fundamental oscillation frequency of 63.5 GHz with a RF output power of-6.6 d Bm, which is the highest recorded power for an In P based planar Gunn diode.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Cumming, Professor David and Khalid, Dr Ata-Ul-Habib |
| Authors: | Maricar, M. I., Khalid, A.-u.-H., Cumming, D. R.S., and Oxley, C.H. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Journal of Terahertz Science and Electronic Information Technology |
| Publisher: | China Academic Journals |
| ISSN: | 2095-4980 |
University Staff: Request a correction | Enlighten Editors: Update this record
Funder and Project Information
Funder and Project Information