Zhang, S., Xie, E., Yan, T., Yang, W., Herrnsdof, J., Gong, Z., Watson, I., Gu, E., Dawson, M. and Hu, X. (2015) Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection. Journal of Applied Physics, 118(12), 125709. (doi: 10.1063/1.4931575)
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Abstract
The authors observe the significant penetration of electrically injected holes through InGaN/GaN quantum wells (QWs) with an indium mole fraction of 40%. This effect and its current density dependence were analysed by studies on micro-pixel light-emitting diodes, which allowed current densities to be varied over a wide range up to 5 kA/cm2. The systematic changes in electroluminescence spectra are discussed in the light of the piezoelectric field in the high-indium-content QWs and its screening by the carriers. Simulations were also carried out to clarify the unusual hole transport mechanism and the underlying physics in these high-indium QWs.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Zhang, Dr Shuailong |
| Authors: | Zhang, S., Xie, E., Yan, T., Yang, W., Herrnsdof, J., Gong, Z., Watson, I., Gu, E., Dawson, M., and Hu, X. |
| Subjects: | Q Science > QC Physics T Technology > T Technology (General) |
| College/School: | College of Science and Engineering > School of Engineering > Biomedical Engineering |
| Journal Name: | Journal of Applied Physics |
| Publisher: | American Institute of Physics |
| ISSN: | 0021-8979 |
| ISSN (Online): | 1089-7550 |
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