Bipolar Monte Carlo Simulation of Hot Carriers In III-N LEDs

Kivisaari, P., Sadi, T., Li, J., Georgiev, V. , Oksanen, J., Rinke, P. and Tulkki, J. (2015) Bipolar Monte Carlo Simulation of Hot Carriers In III-N LEDs. In: SISPAD: International Conference on Semiconductor Process and Device Simulations, Washington, DC, USA, 9-11 Sept 2015, pp. 393-396. ISBN 9781467378581 (doi: 10.1109/SISPAD.2015.7292342)

Abstract

We carry out bipolar Monte Carlo (MC) simulations of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recombination and intraband scattering processes and solves self-consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the MC simulation in order to enable even more detailed predictions of device operation.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Sadi, Dr Toufik and Georgiev, Professor Vihar
• Authors: Kivisaari, P., Sadi, T., Li, J., Georgiev, V., Oksanen, J., Rinke, P., and Tulkki, J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISSN: 1946-1569
• ISBN: 9781467378581
• Copyright Holders: Copyright © 2015 IEEE
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher.

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