Interplay between quantum mechanical effects and a discrete trap position in ultrascaled FinFETs

Georgiev, V. P. , Amoroso, S. M., Gerrer, L., Adamu-Lema, F. and Asenov, A. (2015) Interplay between quantum mechanical effects and a discrete trap position in ultrascaled FinFETs. In: SISPAD 2015: International Conference on Semiconductor Process and Device Simulations, Washington, DC, USA, 9-11 Sept 2015, pp. 246-249. ISBN 9781467378581 (doi: 10.1109/SISPAD.2015.7292305)

111022.pdf - Accepted Version



In this work we establish a link between positions of a single discrete charge trapped in an oxide interface and between the performance of ultra-scaled FinFET transistors. The charge trapped in the oxide induces gate voltage shift (∆VG). This ∆VG is presented as a function of the device geometry for two regimes of conduction – from a sub-threshold to an ON-state. For specific trap positions in the oxide, we show that the trap impact decreases with scaling down of the FinFET size and of the applied gate voltage. We also compare the Drift-Diffusion (DD) calculations with the Non Equilibrium Green Functions (NEGF) simulations in order to investigate the importance of quantum charge confinement in transport and of reliability resilience in ultra-scaled non-planar transistors, such as FinFETs.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Gerrer, Dr Louis and Amoroso, Dr Salvatore and Asenov, Professor Asen and Adamu-Lema, Dr Fikru and Georgiev, Professor Vihar
Authors: Georgiev, V. P., Amoroso, S. M., Gerrer, L., Adamu-Lema, F., and Asenov, A.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2015 IEEE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher.
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Data DOI:978-1-4673-7860-4/15

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