Impurity-related intraband absorption in coupled quantum dot-ring structure under lateral electric field

Barseghyan, M.G., Baghramyan, H.M., Laroze, D., Bragard, J. and Kirakosyan, A.A. (2015) Impurity-related intraband absorption in coupled quantum dot-ring structure under lateral electric field. Physica E: Low-Dimensional Systems and Nanostructures, 74, pp. 421-425. (doi: 10.1016/j.physe.2015.07.032)

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Abstract

The effects of a lateral electric field on intraband absorption in GaAs/GaAlAs two-dimensional coupled quantum dot-ring structure with an on-centre hydrogenic donor impurity is investigated. The confining potential of the system consists of two parabolas with various confinement energies. The calculations are made using the exact diagonalization technique. A selection rule for intraband transitions was found for x-polarized incident light. The absorption spectrum mainly exhibits a redshift with the increment of electric field strength. On the other hand, the absorption spectrum can exhibit either a blue- or redshift depending on the values of confinement energies of dot and ring. Additionally, electric field changes the energetic shift direction influenced by the variation of barrier thickness of the structure.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Laroze, Dr David
Authors: Barseghyan, M.G., Baghramyan, H.M., Laroze, D., Bragard, J., and Kirakosyan, A.A.
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Physica E: Low-Dimensional Systems and Nanostructures
Publisher:Elsevier BV
ISSN:1386-9477
ISSN (Online):1873-1759
Copyright Holders:Copyright © 2015 Elsevier Ltd.
First Published:First published in Physica E: Low-Dimensional Systems and Nanostructures 2015
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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