Bosworth, D., Sahonta, S.-L., Hadfield, R.H. and Barber, Z.H. (2015) Amorphous molybdenum silicon superconducting thin films. AIP Advances, 5(8), 087106. (doi: 10.1063/1.4928285)
|
Text
109045.pdf - Published Version Available under License Creative Commons Attribution. 1MB |
Abstract
Amorphous superconductors have become attractive candidate materials for superconducting nanowire single-photon detectors due to their ease of growth, homogeneity and competitive superconducting properties. To date the majority of devices have been fabricated using WxSi1−x, though other amorphous superconductors such as molybdenum silicide (Mo xSi1−x) offer increased transition temperature. This study focuses on the properties of MoSi thin films grown by magnetron sputtering. We examine how the composition and growth conditions affect film properties. For 100 nm film thickness, we report that the superconducting transition temperature (Tc) reaches a maximum of 7.6 K at a composition of Mo 83Si17. The transition temperature and amorphous character can be improved by cooling of the substrate during growth which inhibits formation of a crystalline phase. X-ray diffraction and transmission electron microscopy studies confirm the absence of long range order. We observe that for a range of 6 common substrates (silicon, thermally oxidized silicon, R- and C-plane sapphire, x-plane lithium niobate and quartz), there is no variation in superconducting transition temperature, making MoSi an excellent candidate material for SNSPDs
Item Type: | Articles |
---|---|
Additional Information: | Supported by the EPSRC through grant EP/I036303/1. |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Hadfield, Professor Robert |
Authors: | Bosworth, D., Sahonta, S.-L., Hadfield, R.H., and Barber, Z.H. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | AIP Advances |
Publisher: | American Institute of Physics |
ISSN: | 2158-3226 |
ISSN (Online): | 2158-3226 |
Copyright Holders: | Copyright © 2015 The Authors |
First Published: | First published in AIP Advances 5(8):087106 |
Publisher Policy: | Reproduced under a Creative Commons License |
University Staff: Request a correction | Enlighten Editors: Update this record