Georgiev, V. and Asenov, A. (2015) Multi-scale computational framework for evaluating of the performance of molecular based flash cells. Lecture Notes in Computer Science, 8962, pp. 196-203. (doi: 10.1007/978-3-319-15585-2_22)
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Abstract
In this work we present a multi-scale computational framework for evaluation of statistical variability in a molecular based non-volatile memory cell. As a test case we analyse a BULK flash cell with polyoxometalates (POM) inorganic molecules used as storage centres. We focuse our discussions on the methodology and development of our innovative and unique computational framework. The capability of the discussed multi-scale approach is demonstrated by establishing a link between the threshold voltage variability and current-voltage characteristics with various oxidation states of the POMs. The presented simulation framework and methodology can be applied not only to the POM based flash cell but they are also transferrable to the flash cells based on alternative molecules used as a storage media.
Item Type: | Articles |
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Additional Information: | ISBN: 9783319155845 |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen and Georgiev, Professor Vihar |
Authors: | Georgiev, V., and Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Research Group: | Device Modelling Group |
Journal Name: | Lecture Notes in Computer Science |
Publisher: | Springer International Publishing |
ISSN: | 0302-9743 |
Copyright Holders: | Copyright © 2015 Springer International Publishing |
First Published: | First published in Lecture Notes in Computer Science 8962:196-203 |
Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher. |
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