Najda, S. P. et al. (2015) AlGaInN laser diode technology and systems for defence and security applications. Laser Technology for Defense and Security XI, Baltimore, MD, USA, 20 Apr 2015. p. 946604. (doi: 10.1117/12.2178463)
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Abstract
The latest developments in AlGaInN laser diode technology are reviewed for defence and security applications such as underwater communications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGaInN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries.
| Item Type: | Conference or Workshop Item |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Watson, Dr Scott |
| Authors: | Najda, S. P., Perlin, P., Suski, T., Marona, L., Boćkowski, M., Leszczyński, M., Wisniewski, P., Czernecki, R., Kucharski, R., Targowski, G., Watson, S., and Kelly, A. E. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| ISSN: | 0277-786X |
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