Millar, R.W. , Gallacher, K. , Samarelli, A., Frigerio, J., Chrastina, D., Dieing, T., Isella, G. and Paul, D.J. (2016) Expanding the Ge emission wavelength to 2.25 μm with SixNy strain engineering. Thin Solid Films, 602, pp. 60-63. (doi: 10.1016/j.tsf.2015.07.017)
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Abstract
Photoluminescence up to 2.25 μm wavelength is demonstrated from Ge nanopillars strained by silicon nitride stressor layers. Tensile biaxial equivalent strains of up to ~1.35% and ~0.9% are shown from 200 × 200 nm, and 300 × 300 nm square top Ge pillars respectively. Strain in the latter is confirmed by Raman spectroscopy, and supported by finite element modelling, which gives an insight into the strain distribution and its effect on the band structure, in pillar structures fully coated by silicon nitride stressor layers.
| Item Type: | Articles |
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| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas and Millar, Dr Ross and Samarelli, Mr Antonio and Gallacher, Dr Kevin |
| Authors: | Millar, R.W., Gallacher, K., Samarelli, A., Frigerio, J., Chrastina, D., Dieing, T., Isella, G., and Paul, D.J. |
| College/School: | College of Science and Engineering > School of Engineering College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Thin Solid Films |
| Publisher: | Elsevier B.V. |
| ISSN: | 0040-6090 |
| ISSN (Online): | 1879-2731 |
| Copyright Holders: | Copyright © 2015 Elsevier B.V. |
| First Published: | First published in Thin Solid Films 602: 60-63 |
| Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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