A mobility correction approach for overcoming artifacts in atomistic drift-diffusion simulation of nano-MOSFETs

Amoroso, S. M., Adamu-Lema, F., Brown, A. R. and Asenov, A. (2015) A mobility correction approach for overcoming artifacts in atomistic drift-diffusion simulation of nano-MOSFETs. IEEE Transactions on Electron Devices, 62(6), pp. 2056-2060. (doi: 10.1109/TED.2015.2419815)

Abstract

A comprehensive statistical investigation of the increase in resistance associated with charge trapping in atomistic simulations is presented. A wide range of doping densities and mesh spacing are considered for both classical and quantum formalisms. A doping-dependent correction factor to modify the mobility model for the atomistic simulations is proposed to suppress the error related to the fictitious charge trapping. The validity of the new mobility model is tested in the statistical simulations of the transistors corresponding to 20-nm bulk CMOS and 14-nm FinFET transistors.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Amoroso, Dr Salvatore and Asenov, Professor Asen and Adamu-Lema, Dr Fikru
• Authors: Amoroso, S. M., Adamu-Lema, F., Brown, A. R., and Asenov, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: IEEE Transactions on Electron Devices
• Publisher: IEEE
• ISSN: 0018-9383
• ISSN (Online): 1557-9646