Najda, S. P. et al. (2015) Advances in Single Mode and High Power AlGaInN Laser Diode Technology for Systems Applications. In: Gallium Nitride Materials and Devices X, San Francisco, CA, USA, 07 Feb 2015, 93631A. (doi: 10.1117/12.2076268)
Full text not currently available from Enlighten.
Abstract
The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGaInN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries.
| Item Type: | Conference Proceedings |
|---|---|
| Additional Information: | Proceedings of SPIE Volume 9363 |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Watson, Dr Scott and Kelly, Professor Anthony |
| Authors: | Najda, S. P., Perlin, P., Suski, T., Marona, L., Boćkowski, M., Leszczyński, M., Wisniewski, P., Czernecki, R., Kucharski, R., Targowski, G., Smalc-Koziorowska, J., Stanczyk, S., Watson, S., and Kelly, A. E. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| ISSN: | 0277-786X |
University Staff: Request a correction | Enlighten Editors: Update this record
Altmetric
Altmetric