Hernández-Saz, J., Herrera, M., Molina, S.I., Stanley, C.R. and Duguay, S. (2015) 3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs. Scripta Materialia, 103, pp. 73-76. (doi: 10.1016/j.scriptamat.2015.03.013)
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Abstract
The 3D compositional distribution at the atomic-scale of InAs/GaAs quantum dots (QDs) with an InAlGaAs capping layer has been obtained by atom probe tomography. A heterogeneous distribution of Al atoms has been revealed. An Al-rich ring around the QDs has been observed. A detailed analysis of the QDs composition evidences a high degree of In/Ga intermixing, with an increasing In gradient in the growth direction. The atomic scale analyses of these nanostructures are essential to understand their functional properties.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Stanley, Professor Colin |
| Authors: | Hernández-Saz, J., Herrera, M., Molina, S.I., Stanley, C.R., and Duguay, S. |
| College/School: | College of Science and Engineering > School of Engineering |
| Journal Name: | Scripta Materialia |
| Publisher: | Elsevier Ltd. |
| ISSN: | 1359-6462 |
| ISSN (Online): | 1872-8456 |
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