Cho, S.J., Roberts, J., Guiney, I., Li, X. , Ternent, G., Floros, K., Humphreys, C.J., Chalker, P. and Thayne, I.G. (2015) A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor. Microelectronic Engineering, 147, pp. 277-280. (doi: 10.1016/j.mee.2015.04.067)
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Abstract
The impact of subjecting a n-GaN surface to an in-situ argon plasma in an atomic layer deposition (ALD) tool immediately before deposition of an Al2O3 dielectric film is assessed by frequency dependent evaluation of Al2O3/GaN MOSCAPs. In comparison with a control with no pre-treatment, the use of a 50 W argon plasma for 5 min reduced hysteresis from 0.25 V to 0.07 V, frequency dispersion from 0.31 V to 0.03 V and minimum interface state density (Dit) as determined by the conductance method from 6.8 1012 cm2 eV1 to 5.05 1010 cm2 eV1 . 201
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and Ternent, Dr Gary and FLOROS, KONSTANTINOS and Li, Dr Xu and Cho, Dr Sung-Jin |
| Authors: | Cho, S.J., Roberts, J., Guiney, I., Li, X., Ternent, G., Floros, K., Humphreys, C.J., Chalker, P., and Thayne, I.G. |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| College/School: | College of Science and Engineering > School of Engineering College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Microelectronic Engineering |
| Publisher: | Elsevier |
| ISSN: | 0167-9317 |
| ISSN (Online): | 1873-5568 |
| Copyright Holders: | Copyright © 2015 The Authors |
| First Published: | First published in Microelectronic Engineering 147:277-280 |
| Publisher Policy: | Reproduced under a Creative Commons License |
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