Electron dynamics in nanoscale transistors by means of Wigner and Boltzmann approaches

Sellier, J.M., Amoroso, S.M., Nedjalkov, M., Selberherr, S., Asenov, A. and Dimov, I. (2014) Electron dynamics in nanoscale transistors by means of Wigner and Boltzmann approaches. Physica A: Statistical Mechanics and its Applications, 398, pp. 194-198. (doi: 10.1016/j.physa.2013.12.045)

Abstract

We present a numerical study of the evolution of a wave packet in a nanoscale MOSFET featuring an ‘atomistic’ channel doping. Our two-dimensional Monte Carlo Wigner simulation results are compared against classical Boltzmann simulation results. We show that the quantum effects due to the presence of a scattering center are manifestly non-local affecting the wave propagation much farther than the geometric limit of the center. In particular the part of the channel close to the oxide interface remains blocked for transport, in contrast to the behavior predicted by classical Boltzmann propagation.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Amoroso, Dr Salvatore and Asenov, Professor Asen
• Authors: Sellier, J.M., Amoroso, S.M., Nedjalkov, M., Selberherr, S., Asenov, A., and Dimov, I.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Physica A: Statistical Mechanics and its Applications
• Publisher: Elsevier
• ISSN: 0378-4371
• ISSN (Online): 1873-2119