Heidari, H. , Wacker, N., Roy, S. and Dahiya, R. (2015) Towards Bendable CMOS Magnetic Sensors. In: IEEE Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Glasgow, UK, 29 Jun - 02 Jul 2015, pp. 314-317. (doi: 10.1109/PRIME.2015.7251398)
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105872.pdf - Accepted Version 615kB |
Abstract
This paper analyses the bending-induced stress effects on ultra-thin cross-shaped magnetic sensors operating in voltage- or current-modes. Both the magnetic sensor’s sensitivity and the offset drift have been analysed. The optimum geometry and thickness of the Hall sensor are the important parameters to be analysed to compensate any mechanical stress related effect on the performance of sensors. Numerical simulations are carried out using the finite element method (FEM) with COMSOL Multiphysicsr software. A compact model is implemented in Verilog-A and used for the simulations in Cadence Spectre, considering a 350 nm CMOS process. The simulation results focus on magnetic sensor’s sensitivity variation and offset drift induced by bending of the substrate. The simulation results show a sensitivity of 71 V/AT at 100 mT. Interestingly, the sensitivity variation induced by 250 MPa applied uniaxial stress is less than 0.02 %.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Dahiya, Professor Ravinder and Heidari, Professor Hadi and Roy, Professor Scott |
| Authors: | Heidari, H., Wacker, N., Roy, S., and Dahiya, R. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Copyright Holders: | Copyright © 2015 IEEE |
| Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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