Tian, P. et al. (2013) Characteristics and Applications of InGaN Micro-Light Emitting Diodes on Si Substrates. In: 2013 IEEE Photonics Conference (IPC), Bellevue, WA, USA, 8-12 Sep 2013, pp. 97-98. ISBN 9781457715068 (doi: 10.1109/IPCon.2013.6656387)
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Abstract
InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.
Item Type: | Conference Proceedings |
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Keywords: | GaN, micro-LEDs, Si, bandwidth |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Watson, Dr Scott and Kelly, Professor Anthony and Zhang, Dr Shuailong |
Authors: | Tian, P., McKendry, J., Gong, Z., Zhang, S., Watson, S., Zhu, D., Watson, I., Gu, E., Kelly, A. E., Humphreys, C., and Dawson, M. |
Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
College/School: | College of Science and Engineering > School of Engineering > Biomedical Engineering College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
ISBN: | 9781457715068 |
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