Han, G. et al. (2014) A new crystal: layer-structured rhombohedral In3Se4. CrystEngComm, 16(3), pp. 393-398. (doi: 10.1039/C3CE41815D)
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Abstract
A new layer-structured rhombohedral In3Se4 crystal was synthesized by a facile and mild solvothermal method. Detailed structural and chemical characterizations using transmission electron microscopy, coupled with synchrotron X-ray diffraction analysis and Rietveld refinement, indicate that In3Se4 crystallizes in a layered rhombohedral structure with lattice parameters of a = 3.964 ± 0.002 Å and c = 39.59 ± 0.02 Å, a space group of Rm, and with a layer composition of Se–In–Se–In–Se–In–Se. The theoretical modeling and experimental measurements indicate that the In3Se4 is a self-doped n-type semiconductor. This study not only enriches the understanding on crystallography of indium selenide crystals, but also paves a way in the search for new semiconducting compounds.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Han, Dr Guang |
| Authors: | Han, G., Chen, Z.-G., Sun, C., Yang, L., Cheng, L., Li, Z., Lu, W., Gibbs, Z. M., Snyder, G. J., Jack, K., Drennan, J., and Zou, J. |
| College/School: | College of Science and Engineering > School of Chemistry |
| Journal Name: | CrystEngComm |
| Publisher: | R S C Publications |
| ISSN: | 1466-8033 |
| ISSN (Online): | 1466-8033 |
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