Biagioni, P. et al. (2015) Group-IV midinfrared plasmonics. Journal of Nanophotonics, 9(1), 093789. (doi: 10.1117/1.JNP.9.093789)
|
Text
104617.pdf - Published Version Available under License Creative Commons Attribution. 1MB |
Abstract
The use of heavily doped semiconductors to achieve plasma frequencies in the mid-IR has been recently proposed as a promising way to obtain high-quality and tunable plasmonic materials. We introduce a plasmonic platform based on epitaxial n-type Ge grown on standard Si wafers by means of low-energy plasma-enhanced chemical vapor deposition. Due to the large carrier concentration achieved with P dopants and to the compatibility with the existing CMOS technology, SiGe plasmonics hold promises for mid-IR applications in optoelectronics, IR detection, sensing, and light harvesting. As a representative example, we show simulations of mid-IR plasmonic waveguides based on the experimentally retrieved dielectric constants of the grown materials.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas and Millar, Dr Ross and Samarelli, Mr Antonio and Gallacher, Dr Kevin |
| Authors: | Biagioni, P., Frigerio, J., Samarelli, A., Gallacher, K., Baldassarre, L., Sakat, E., Calandrini, E., Millar, R. W., Giliberti, V., Isella, G., Paul, D. J., and Ortolani, M. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Journal of Nanophotonics |
| Publisher: | S P I E - International Society for Optical Engineering |
| ISSN: | 1934-2608 |
| ISSN (Online): | 1934-2608 |
| Copyright Holders: | Copyright © 2015 The Author |
| First Published: | First published in the Journal of Nanophotonics 9(1):093789 |
| Publisher Policy: | Reproduced under a Creative Commons License |
University Staff: Request a correction | Enlighten Editors: Update this record
Funder and Project Information
Funder and Project Information