Group-IV midinfrared plasmonics

Biagioni, P. et al. (2015) Group-IV midinfrared plasmonics. Journal of Nanophotonics, 9(1), 093789. (doi: 10.1117/1.JNP.9.093789)

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The use of heavily doped semiconductors to achieve plasma frequencies in the mid-IR has been recently proposed as a promising way to obtain high-quality and tunable plasmonic materials. We introduce a plasmonic platform based on epitaxial n-type Ge grown on standard Si wafers by means of low-energy plasma-enhanced chemical vapor deposition. Due to the large carrier concentration achieved with P dopants and to the compatibility with the existing CMOS technology, SiGe plasmonics hold promises for mid-IR applications in optoelectronics, IR detection, sensing, and light harvesting. As a representative example, we show simulations of mid-IR plasmonic waveguides based on the experimentally retrieved dielectric constants of the grown materials.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas and Millar, Dr Ross and Samarelli, Mr Antonio and Gallacher, Dr Kevin
Authors: Biagioni, P., Frigerio, J., Samarelli, A., Gallacher, K., Baldassarre, L., Sakat, E., Calandrini, E., Millar, R. W., Giliberti, V., Isella, G., Paul, D. J., and Ortolani, M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Nanophotonics
Publisher:S P I E - International Society for Optical Engineering
ISSN (Online):1934-2608
Copyright Holders:Copyright © 2015 The Author
First Published:First published in the Journal of Nanophotonics 9(1):093789
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
634451GEMINIDouglas PaulEuropean Commission (EC)613055ENG - ENGINEERING ELECTRONICS & NANO ENG