Forrest, A., Wang, H., Mi, J., Cui, B., Pan, J., Ding, Y. and Cataluna, M.A. (2015) Mode-Locked Double Active Region Laser Diode. In: CLEO/Europe - EQEC 2015, Munich, Germany, 21-25 June 2015, p. 1661.
Full text not currently available from Enlighten.
Publisher's URL: http://www.cleoeurope.org/
Abstract
We present the first monolithic mode-locked laser diode with two quantum well active regions connected by a GaAs tunnel junction (PiNPiN). Picosecond pulses were achieved at 1040 nm, with a 24 GHz repetition rate.
Item Type: | Conference Proceedings |
---|---|
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Ding, Dr Ying |
Authors: | Forrest, A., Wang, H., Mi, J., Cui, B., Pan, J., Ding, Y., and Cataluna, M.A. |
College/School: | College of Science and Engineering > School of Engineering College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
University Staff: Request a correction | Enlighten Editors: Update this record