Mode-Locked Double Active Region Laser Diode

Forrest, A., Wang, H., Mi, J., Cui, B., Pan, J., Ding, Y. and Cataluna, M.A. (2015) Mode-Locked Double Active Region Laser Diode. In: CLEO/Europe - EQEC 2015, Munich, Germany, 21-25 June 2015, p. 1661.

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Publisher's URL: http://www.cleoeurope.org/

Abstract

We present the first monolithic mode-locked laser diode with two quantum well active regions connected by a GaAs tunnel junction (PiNPiN). Picosecond pulses were achieved at 1040 nm, with a 24 GHz repetition rate.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Ding, Dr Ying
Authors: Forrest, A., Wang, H., Mi, J., Cui, B., Pan, J., Ding, Y., and Cataluna, M.A.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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