Russell, S., Sharabi, S., Tallaire, A. and Moran, D. A. J. (2015) RF operation of hydrogen-terminated diamond field effect transistors: a comparative study. IEEE Transactions on Electron Devices, 62(3), pp. 751-756. (doi: 10.1109/TED.2015.2392798)
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Publisher's URL: http://dx.doi.org/10.1109/TED.2015.2392798
Abstract
Three sets of different gate-length field-effect transistors (250, 120, and 50 nm) have been defined on homoepitaxial hydrogen-terminated diamond with the 50-nm device being the smallest gate length diamond transistor fabricated to date. DC- and small-signal RF measurements were undertaken to compare the operation of these gate nodes. RF small-signal equivalent circuits were generated to contrast individual components and better understand the operation at various gate dimensions. Scaling the gate length to smaller dimensions leads to an increase in the cutoff frequency of these devices although parasitic elements are found to dominate at the shortest gate length of 50 nm, limiting the outstanding potential of these devices.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Sharabi, Mr Salah and Russell, Dr Stephen and Moran, Professor David |
Authors: | Russell, S., Sharabi, S., Tallaire, A., and Moran, D. A. J. |
College/School: | College of Science and Engineering > School of Chemistry College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Transactions on Electron Devices |
Publisher: | Institute of Electrical and Electronics Engineers |
ISSN: | 0018-9383 |
ISSN (Online): | 1557-9646 |
Copyright Holders: | Copyright © 2015 The Authors |
First Published: | First published in IEEE Transactions on Electron Devices 62(3):751-756 |
Publisher Policy: | Reproduced under a Creative Commons License |
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