RF operation of hydrogen-terminated diamond field effect transistors: a comparative study

Russell, S., Sharabi, S., Tallaire, A. and Moran, D. A. J. (2015) RF operation of hydrogen-terminated diamond field effect transistors: a comparative study. IEEE Transactions on Electron Devices, 62(3), pp. 751-756. (doi: 10.1109/TED.2015.2392798)

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Publisher's URL: http://dx.doi.org/10.1109/TED.2015.2392798

Abstract

Three sets of different gate-length field-effect transistors (250, 120, and 50 nm) have been defined on homoepitaxial hydrogen-terminated diamond with the 50-nm device being the smallest gate length diamond transistor fabricated to date. DC- and small-signal RF measurements were undertaken to compare the operation of these gate nodes. RF small-signal equivalent circuits were generated to contrast individual components and better understand the operation at various gate dimensions. Scaling the gate length to smaller dimensions leads to an increase in the cutoff frequency of these devices although parasitic elements are found to dominate at the shortest gate length of 50 nm, limiting the outstanding potential of these devices.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Sharabi, Mr Salah and Russell, Dr Stephen and Moran, Professor David
Authors: Russell, S., Sharabi, S., Tallaire, A., and Moran, D. A. J.
College/School:College of Science and Engineering > School of Chemistry
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0018-9383
ISSN (Online):1557-9646
Copyright Holders:Copyright © 2015 The Authors
First Published:First published in IEEE Transactions on Electron Devices 62(3):751-756
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
450861Ultra short gate length diamond FETs for high power/high frequency applicationsDavid MoranEngineering & Physical Sciences Research Council (EPSRC)EP/E054668/1ENG - ENGINEERING ELECTRONICS & NANO ENG