Comparison between bulk and FDSOI POM flash cell: a multiscale simulation study

Georgiev, V. P. , Amoroso, S. M., Ali, T. M., Vila-Nadal, L. , Busche, C. , Cronin, L. and Asenov, A. (2015) Comparison between bulk and FDSOI POM flash cell: a multiscale simulation study. IEEE Transactions on Electron Devices, 62(2), pp. 680-684. (doi: 10.1109/TED.2014.2378378)

Abstract

In this brief, we present a multiscale simulation study of a fully depleted silicon-on-insulator (FDSOI) nonvolatile memory cell based on polyoxometalates (POMs) inorganic molecular clusters used as a storage media embedded in the gate dielectric of flash cells. In particular, we focus our discussion on the threshold voltage variability introduced by random discrete dopants (random dopant fluctuation) and by fluctuations in the distribution of the POM molecules in the storage media (POM fluctuation). To highlight the advantages of the FDSOI POM flash cell, we provide a comparison with an equivalent cell based on conventional (BULK) transistors. The presented simulation framework and methodology is transferrable to flash cells based on alternative molecules used as a storage media.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Busche, Dr Christopher and Amoroso, Dr Salvatore and Asenov, Professor Asen and Vila-Nadal, Dr Laia and Cronin, Professor Lee and Georgiev, Professor Vihar
• Authors: Georgiev, V. P., Amoroso, S. M., Ali, T. M., Vila-Nadal, L., Busche, C., Cronin, L., and Asenov, A.
• College/School: College of Science and Engineering > School of Chemistry; College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: IEEE Transactions on Electron Devices
• Publisher: Institute of Electrical and Electronics Engineers
• ISSN: 0018-9383
• ISSN (Online): 0018-9383
• Copyright Holders: Copyright © 2015 IEEE
• First Published: First published in IEEE Transactions on Electron Devices 62(2):680-684
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher.