Edge pixel response studies of edgeless silicon sensor technology for pixellated imaging detectors

Maneuski, D. et al. (2015) Edge pixel response studies of edgeless silicon sensor technology for pixellated imaging detectors. Journal of Instrumentation, 10, P03018. (doi: 10.1088/1748-0221/10/03/P03018)

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Silicon sensor technologies with reduced dead area at the sensor's perimeter are under development at a number of institutes. Several fabrication methods for sensors which are sensitive close to the physical edge of the device are under investigation utilising techniques such as active-edges, passivated edges and current-terminating rings. Such technologies offer the goal of a seamlessly tiled detection surface with minimum dead space between the individual modules. In order to quantify the performance of different geometries and different bulk and implant types, characterisation of several sensors fabricated using active-edge technology were performed at the B16 beam line of the Diamond Light Source. The sensors were fabricated by VTT and bump-bonded to Timepix ROICs. They were 100 and 200 μ m thick sensors, with the last pixel-to-edge distance of either 50 or 100 μ m. The sensors were fabricated as either n-on-n or n-on-p type devices. Using 15 keV monochromatic X-rays with a beam spot of 2.5 μ m, the performance at the outer edge and corners pixels of the sensors was evaluated at three bias voltages. The results indicate a significant change in the charge collection properties between the edge and 5th (up to 275 μ m) from edge pixel for the 200 μ m thick n-on-n sensor. The edge pixel performance of the 100 μ m thick n-on-p sensors is affected only for the last two pixels (up to 110 μ m) subject to biasing conditions. Imaging characteristics of all sensor types investigated are stable over time and the non-uniformities can be minimised by flat-field corrections. The results from the synchrotron tests combined with lab measurements are presented along with an explanation of the observed effects.

Item Type:Articles
Glasgow Author(s) Enlighten ID:O'Shea, Professor Val and Maneuski, Dr Dima and Mcmullen, Mr Thomas and Plackett, Dr Richard and Eklund, Prof Lars and Blue, Dr Andrew and Buttar, Professor Craig and Wraight, Dr Kenneth and Doonan, Miss Kate and Bates, Dr Richard
Authors: Maneuski, D., Bates, R., Blue, A., Buttar, C., Doonan, K., Eklund, L., Gimenez, E.N., Hynds, D., Kachkanov, S., Kalliopuska, J., McMullen, T., O'Shea, V., Tartoni, N., Plackett, R., Vahanen, S., and Wraight, K.
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Journal of Instrumentation
Publisher:Institute of Physics Publishing Ltd.
ISSN (Online):1748-0221
Copyright Holders:Copyright © 2015 The Authors
First Published:First published in Journal of Instrumentation 10:P03018
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
600011Experimental Particle PhysicsAnthony DoyleScience & Technologies Facilities Council (STFC)ST/K001205/1P&A - PHYSICS & ASTRONOMY