A GaAs-based hybrid integration of a tunneling diode and a 1060-nm semiconductor laser

Mi, J., Yu, H., Wang, H., Tan, S., Chen, W., Ding, Y. and Pan, J. (2015) A GaAs-based hybrid integration of a tunneling diode and a 1060-nm semiconductor laser. IEEE Photonics Technology Letters, 27(2), pp. 169-172. (doi: 10.1109/LPT.2014.2364073)

Abstract

We report on a hybrid integrated tunneling diode, with a simple structure, and a quantum well laser diode, lasing at ~1060 nm, on GaAs substrate. The low-frequency operation of the integrated circuit was measured and obvious negative differential resistance regions were shown in the electrical and optical output. The electrical and optical bistability were measured, and the peak and valley voltage were 2.03 and 2.17 V, respectively. A 140-mV-wide hysteresis loop and an optical on/off ratio of 21 dB were obtained. The device has potential applications in biomedicine and optical interconnects.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Ding, Dr Ying
• Authors: Mi, J., Yu, H., Wang, H., Tan, S., Chen, W., Ding, Y., and Pan, J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: IEEE Photonics Technology Letters
• Publisher: IEEE
• ISSN: 1041-1135
• ISSN (Online): 1941-0174