Wasige, E. , Kompa, G., van Raay, F., Rangelow, I.W., Scholz, W., Shi, F., Kassing, R., Meyer, R. and Amann, M.-C. (1997) Air bridge based planar hybrid technology for microwave and millimeterwave applications. In: IEEE MTT-S International Microwave Symposium, Denver, CO, USA, 8-13 Jun 1997, pp. 925-928. (doi: 10.1109/MWSYM.1997.602951)
Full text not currently available from Enlighten.
Publisher's URL: http://dx.doi.org/10.1109/MWSYM.1997.602951
Abstract
A new silicon based, planar hybrid technology is being developed to address limitations associated with packaging and interconnections. The approach combines the advantages of both hybrid and monolithic technologies. Microwave transistor chips (GaAs FETs) are integrated in high resistivity silicon substrates with a vertical precision of better than 2 /spl mu/m and lateral tolerances less than 10 /spl mu/m. Air bridge technology and thin film techniques are then used to provide the necessary interconnections. The basic features of the proposed technology are presented here.
Item Type: | Conference Proceedings |
---|---|
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Wasige, Professor Edward |
Authors: | Wasige, E., Kompa, G., van Raay, F., Rangelow, I.W., Scholz, W., Shi, F., Kassing, R., Meyer, R., and Amann, M.-C. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
ISSN: | 0149-645X |
University Staff: Request a correction | Enlighten Editors: Update this record