Al-Khalidi, A. , Gallacher, K. and Wasige, E. (2014) Effect of annealing time and temperature on Ohmic contacts to AlN/GaN HEMT structure with in-situ SiN passivation. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014, p. 185.
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Publisher's URL: http://ssg.sheffield.ac.uk/events/uk-semiconductors-2014/
Abstract
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| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Wasige, Professor Edward and Al-Khalidi, Dr Abdullah |
| Authors: | Al-Khalidi, A., Gallacher, K., and Wasige, E. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
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