Fabrication and characterisation of normally-off GaN-based MOS-HEMTs

Sinclair, J., Brown, R., Al-Khalidi, A. and Wasige, E. (2014) Fabrication and characterisation of normally-off GaN-based MOS-HEMTs. In: 7th IET International Conference on Power Electronics, Machines and Drives (PEMD) 2014, Manchester, UK, 8-10 Apr 2014, ISBN 9781849198141

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Abstract

No abstract available.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Brown, Mr Raphael and Al-Khalidi, Dr Abdullah
Authors: Sinclair, J., Brown, R., Al-Khalidi, A., and Wasige, E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISBN:9781849198141

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