Investigation of the GaN-on-GaAs interface for vertical power device applications

Möreke, J. et al. (2014) Investigation of the GaN-on-GaAs interface for vertical power device applications. Journal of Applied Physics, 116(1), 014502. (doi: 10.1063/1.4887139)

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GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Al-Khalidi, Dr Abdullah
Authors: Möreke, J., Uren, M. J., Novikov, S. V., Foxon, C. T., Hosseini Vajargah, S., Wallis, D. J., Humphreys, C. J., Haigh, S. J., Al-Khalidi, A., Wasige, E., Thayne, I., and Kuball, M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Applied Physics
Publisher:American Institute of Physics
ISSN (Online):1089-7550

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