Barker, J. R. and Martinez, A. (2014) Remote soft-optical phonon scattering in Si nanowire FETs. In: 2014 International Workshop on Computational Electronics (IWCE), Paris, France, 3-6 Jun 2014, pp. 1-3. (doi: 10.1109/IWCE.2014.6865851)
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Publisher's URL: http://dx.doi.org/10.1109/IWCE.2014.6865851
Abstract
In this work we calculate the impact of remote SO phonon scattering on the transfer characteristics of gate-all-around Si nanowire transistors. The polar SO phonons are confined to the HfO2/Si interface. Nanowire transistors with two different cross-sections are considered. The results show that the impact on the drain current is of the same order and of the same importance as other commonly used bulk-type phonons.
Item Type: | Conference Proceedings |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Barker, Professor John and Martinez, Dr Antonio |
Authors: | Barker, J. R., and Martinez, A. |
College/School: | College of Science and Engineering > School of Engineering |
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