Barker, J., Martinez, A., Aldegunde, M. and Valin, R. (2014) Causal self-energies for NEGF modelling of quantum nanowires. Journal of Physics: Conference Series, 526(1), 012001. (doi: 10.1088/1742-6596/526/1/012001)
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Abstract
Electron-phonon scattering is shown to increase dramatically at small nanowire cross-sections so that the transport is not ballistic. Non-ballistic dissipative device modelling requires the full complexity of the non-equilibrium Green Function (NEGF) method. The role of causality in obtaining spectral sum rule-conserving approximations to the electron-phonon self-energies is demonstrated and applications given for wrap-round gate silicon nanowire field effect transistors. Causality violations give erroneous density of states and current densities.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Barker, Professor John and Martinez, Dr Antonio |
| Authors: | Barker, J., Martinez, A., Aldegunde, M., and Valin, R. |
| College/School: | College of Science and Engineering > School of Engineering College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Journal of Physics: Conference Series |
| Publisher: | Institute of Physics Publishing Ltd. |
| ISSN: | 1742-6588 |
| ISSN (Online): | 1742-6596 |
| Copyright Holders: | Copyright © 2014 The Authors |
| First Published: | First published in Journal of Physics: Conference Series 526(1):012001 |
| Publisher Policy: | Reproduced under a Creative Commons License |
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