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Elksne, M. , Al-Khalidi, A. and Wasige, E. (2019) A planar distributed channel AlGaN/GaN HEMT technology. IEEE Transactions on Electron Devices, 66(5), pp. 2454-2458. (doi: 10.1109/TED.2019.2907152)

Cho, S.-J., Li, X. , Guiney, I., Floros, K., Hemakumara, D., Wallis, D.J., Humphreys, C. and Thayne, I.G. (2018) Impact of stress in ICP-CVD SiN x passivation films on the leakage current in AlGaN/GaN HEMTs. Electronics Letters, 54(15), pp. 947-949. (doi: 10.1049/el.2018.1097)

Floros, K., Li, X. , Guiney, I., Cho, S.-J., Hemakumara, D., Wallis, D. J., Wasige, E. , Moran, D. A.J. , Humphreys, C. J. and Thayne, I. G. (2017) Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt and Ni based gate stacks. Physica Status Solidi A: Applications and Materials Science, 214(8), 1600835. (doi: 10.1002/pssa.201600835)

Thayne, I. , Li, X. , Millar, D., Fu, Y.-C. and Peralagu, U. (2017) Plasma Processing of III-V Materials for Energy Efficient Electronics Applications. In: Advanced Etch Technology for Nanopatterning VI, San Jose, CA, USA, 27 Feb - 01 Mar 2017, 101490R. (doi:10.1117/12.2257863)

Cho, S.-J., Li, X. , Floros, K., Hamakumara, D., Ignatova, O. , Moran, D. , Humphreys, C.J. and Thayne, I. (2016) Low off-state Leakage Currents in AlGaN/GaN High Electron Mobility Transistors By Employing A Highly Stressed SiNx Surface Passivation Layer. 19th Workshop on Dielectrics in Microelectronics (WoDIM), Aci Castello, Catania, Italy, 27-30 Jun 2016.

Roberts, J.W., Chalker, P.R., Lee, K.B., Houston, P.A., Cho, S.-J., Thayne, I.G. , Guiney, I., Wallis, D. and Humphreys, C.J. (2016) Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. Applied Physics Letters, 108(7), 072901. (doi: 10.1063/1.4942093)

Cho, S.J., Roberts, J., Guiney, I., Li, X. , Ternent, G., Floros, K., Humphreys, C.J., Chalker, P. and Thayne, I.G. (2015) A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor. Microelectronic Engineering, 147, pp. 277-280. (doi: 10.1016/j.mee.2015.04.067)

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