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Asenov, A. , Cheng, B., Wang, X., Brown, A.R., Reid, D., Millar, C. and Alexander, C. (2013) Simulation based transistor-SRAM co-design in the presence of statistical variability and reliability. In: IEEE International Electron Devices Meeting (IEDM), Washington, D.C., USA, 9-11 Dec 2013, pp. 818-821.

Wang, X., Cheng, B., Brown, A.R., Miller, C. and Asenov, A. (2012) Statistical variability in 14-nm node SOI FinFETs and its impact on corresponding 6T-SRAM cell design. In: ESSDERC2012: European Solid-State Device Research Conference 2012, Bordeaux, France, 17-21 Sep 2012, pp. 113-116. (doi: 10.1109/ESSDERC.2012.6343346)

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