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Wang, X., Adamu-Lema, F., Cheng, B. and Asenov, A. (2013) Geometry, temperature, and body bias dependence of statistical variability in 20-nm bulk CMOS technology: a comprehensive simulation analysis. IEEE Transactions on Electron Devices, 60(5), pp. 1547-1554. (doi:10.1109/TED.2013.2254490)

Wang, X., Cheng, B., Brown, A.R., Miller, C. and Asenov, A. (2012) Statistical variability in 14-nm node SOI FinFETs and its impact on corresponding 6T-SRAM cell design. In: ESSDERC2012: European Solid-State Device Research Conference 2012, Bordeaux, France, 17-21 Sep 2012, pp. 113-116. (doi:10.1109/ESSDERC.2012.6343346)

Wang, X., Brown, A., Cheng, B. and Asenov, A. (2012) RTS amplitude distribution in 20nm SOI finFETs subject to statistical variability. In: SISPAD: International Conference on Semiconductor Process and Device Simulations, Denver, CO, USA, 5-7 Sep 2012, pp. 296-299.

Wang, X., Brown, A., Cheng, B. and Asenov, A. (2012) Statistical distribution of RTS amplitudes in 20nm SOI FinFETs. In: Silicon Nanoelectronics Workshop (SNW 2012), Honolulu, HI, USA, 10-11 Jun 2012, (doi:10.1109/SNW.2012.6243347)

Abid, K., Wang, X., Khokhar, A. Z., Watson, S. , Al-Hasani, S. and Rahman, F. (2011) Electrically tuneable spectral responsivity in gated silicon photodiodes. Applied Physics Letters, 99(23), p. 231104. (doi:10.1063/1.3665613)

Benbakhti, B. et al. (2011) Numerical analysis of the new implant-free quantum-well CMOS: DualLogic approach. Solid-State Electronics, 63(1), pp. 14-18. (doi:10.1016/j.sse.2011.05.006)

Markov, S., Wang, X., Moezi, N. and Asenov, A. (2011) Drain current collapse in nanoscaled bulk MOSFETs due to random dopant compensation in the source/drain extensions. IEEE Transactions on Electron Devices, 58(8), pp. 2385-2393. (doi:10.1109/TED.2011.2152845)

Wang, X., Brown, A.R., Idris, N., Markov, S., Roy, G. and Asenov, A. (2011) Statistical threshold-voltage variability in scaled decananometer bulk HKMG MOSFETs: a full-scale 3-D simulation scaling study. IEEE Transactions on Electron Devices, 58(8), pp. 2293-2301. (doi:10.1109/TED.2011.2149531)

Cheng, B., Brown, A.R. and Asenov, A. (2011) Impact of NBTI/PBTI on SRAM stability degradation. IEEE Electron Device Letters, 32(6), pp. 740-742. (doi:10.1109/LED.2011.2136316)

Wang, X., Roy, S., Brown, A.R. and Asenov, A. (2011) Impact of STI on statistical variability and reliability of decananometer MOSFETs. IEEE Electron Device Letters, 32(4), pp. 479-481. (doi:10.1109/LED.2011.2108256)

Brown, A.R., Huard, V. and Asenov, A. (2010) Statistical Simulation of Progressive NBTI Degradation in a 45-nm Technology pMOSFET. IEEE Transactions on Electron Devices, 57(9), pp. 2320-2323. (doi:10.1109/TED.2010.2052694)

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