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Bentley, S. et al. (2011) Electron mobility in surface- and buried- channel flatband In0.53Ga0.47As MOSFETs with ALD Al2O3 gate dielectric. IEEE Electron Device Letters, 32(4), pp. 494-496. (doi:10.1109/LED.2011.2107876)

Paterson, G.W. , Holland, M.C., Thayne, I.G. and Long, A.R. (2011) Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses. Journal of Applied Physics, 110(11), p. 114115. (doi:10.1063/1.3665720)

Paterson, G.W. , Holland, M.C., Bentley, S.J., Thayne, I.G. and Long, A.R. (2011) Gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As n+ MOS capacitors: The interface state model and beyond. Journal of Applied Physics, 109(12), p. 124112. (doi:10.1063/1.3599895)

Li, X. , Bentley, S., McLelland, H., Holland, M., Zhou, H., Thoms, S. , Macintyre, D. and Thayne, I. (2010) Low damage fully self-aligned replacement gate process for fabricating deep sub-100 nm gate length GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 28(6), C6L1. (doi:10.1116/1.3501355)

Li, X. , Hill, R.J.W., Longo, P., Holland, M.C., Zhou, H., Thoms, S. , Macintyre, D.S. and Thayne, I.G. (2009) Fully self-aligned process for fabricating 100 nm gate length enhancement mode GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 27(6), pp. 3153-3157. (doi:10.1116/1.3256624)

Paterson, G.W. , Longo, P., Wilson, J.A., Craven, A.J., Long, A.R., Thayne, I.G., Passlack, M. and Droopad, R. (2008) Gallium oxide and gadolinium gallium oxide insulators on Si δ-doped GaAs/AlGaAs heterostructures. Journal of Applied Physics, 104(10), p. 103719. (doi:10.1063/1.3029661)

Kalna, K., Seoane, N., Garcia-Loureiro, A. J., Thayne, I. G. and Asenov, A. (2008) Benchmarking of scaled InGaAs implant-free NanoMOSFETs. IEEE Transactions on Electron Devices, 55(9), pp. 2297-2306. (doi:10.1109/TED.2008.927658)

Hill, R.J.W. et al. (2008) 1 μm gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737μS/μm. Electronics Letters, 44, pp. 498-500. (doi:10.1049/el:20080470)

Hill, R.J.W. et al. (2007) Enhancement-mode GaAs MOSFETs with an In0.3 Ga0.7As channel, a mobility of over 5000 cm2/V ·s, and transconductance of over 475 μS/μm. IEEE Electron Device Letters, 28(12), pp. 1080-1082. (doi:10.1109/LED.2007.910009)

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