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Crawford, K. G. , Tallaire, A., Li, X. , Macdonald, D. A., Qi, D. and Moran, D. A.J. (2018) The role of hydrogen plasma power on surface roughness and carrier transport in transfer-doped H-diamond. Diamond and Related Materials, 84, pp. 48-54. (doi:10.1016/j.diamond.2018.03.005)

Crawford, K. G. , Qi, D., McGlynn, J., Ivanov, T. G., Shah, P. B., Weil, J., Tallaire, A., Ganin, A. Y. and Moran, D. A.J. (2018) Thermally stable, high performance transfer doping of diamond using transition metal oxides. Scientific Reports, 8, 3342. (doi:10.1038/s41598-018-21579-4) (PMID:29463823) (PMCID:PMC5820251)

Russell, S., Sharabi, S., Tallaire, A. and Moran, D. A. J. (2015) RF operation of hydrogen-terminated diamond field effect transistors: a comparative study. IEEE Transactions on Electron Devices, 62(3), pp. 751-756. (doi:10.1109/TED.2015.2392798)

Cappelluti, F., Ghione, G., Russell, S.A.O., Moran, D.A.J. , Verona, C. and Limiti, E. (2015) Investigating the properties of interfacial layers in planar Schottky contacts on hydrogen-terminated diamond through direct current/small-signal characterization and radial line small-signal modelling. Applied Physics Letters, 106, 103504. (doi:10.1063/1.4915297)

Russell, S. A. O., Cao, L., Qi, D., Tallaire, A., Crawford, K. G., Wee, A. T. S. and Moran, D. A. J. (2013) Surface transfer doping of diamond by MoO3: a combined spectroscopic and Hall measurement study. Applied Physics Letters, 103(20), p. 202112. (doi:10.1063/1.4832455)

Russell, S., Sharabi, S., Tallaire, A. and Moran, D. (2012) Hydrogen-terminated diamond field-effect transistors with cutoff frequency of 53 GHz. IEEE Electron Device Letters, 33(10), pp. 1471-1473. (doi:10.1109/LED.2012.2210020)

Greer, A.I.M. and Moran, D.A.J. (2012) Charge dissipation layer optimisation for nano-scale electron-beam lithography pattern definition onto diamond. Diamond and Related Materials, 29, pp. 13-17. (doi:10.1016/j.diamond.2012.07.003)

Greer, A.I.M., Seunarine, K., Khokhar, A., Li, X. , Moran, D. and Gadegaard, N. (2012) Direct nanopatterning of commercially pure titanium with ultra-nanocrystalline diamond stamps. Physica Status Solidi A: Applications and Materials Science, 209(9), pp. 1721-1725. (doi:10.1002/pssa.201200057)

Moran, D. A. J. , Russell, S. A. O., Sharabi, S. and Tallaire, A. (2012) High frequency hydrogen-terminated diamond field effect transistor technology. In: 12th IEEE International Conference on Nanotechnology (IEEE-NANO), Birmingham UK, 20-23 Aug 2012, pp. 1-5. ISBN 9781467321983 (doi:10.1109/NANO.2012.6321925)

Moran, D.A.J. , MacLaren, D. A. , Porro, S., McLelland, H., John, P. and Wilson, J.I.B. (2011) Processing of 50 nm gate-length hydrogen terminated diamond FETs for high frequency and high power applications. Microelectronic Engineering, 88(8), pp. 2691-2693. (doi:10.1016/j.mee.2010.11.029)

Moran, D.A.J. , Fox, O.J.L., McLelland, H., Russell, S. and May, P.W. (2011) Scaling of hydrogen-terminated diamond FETs to Sub-100-nm gate dimensions. IEEE Electron Device Letters, 32(5), pp. 599-601. (doi:10.1109/LED.2011.2114871)

Bentley, S., Li, X. , Moran, D.A.J. and Thayne, I.G. (2009) Two methods of realising 10 nm T-gate lithography. Microelectronic Engineering, 86(4-6), pp. 1067-1070. (doi:10.1016/j.mee.2008.12.029)

This list was generated on Thu Aug 22 08:02:51 2019 BST.