Browse by Research Project Code

Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0

Medina-Bailon, C., Padilla, J. L., Sampedro, C., Donetti, L., Gergiev, V. P. , Gamiz, F. and Asenov, A. (2021) Self-consistent enhanced S/D tunneling implementation in a 2D MS-EMC nanodevice simulator. Micromachines, 12(6), 601. (doi: 10.3390/mi12060601)

Medina-Bailon, C., Dutta, T. , Rezaei, A., Nagy, D. , Adamu-Lema, F., Georgiev, V. P. and Asenov, A. (2021) Simulation and modeling of novel electronic device architectures with NESS (Nano-Electronic Simulation Software): a modular nano TCAD simulation framework. Micromachines, 12(6), 680. (doi: 10.3390/mi12060680)

Guan, Y., Carrillo-Nuñez, H., Georgiev, V. P. , Asenov, A. , Liang, F., Li, Z. and Chen, H. (2021) Quantum simulation investigation of work-function variation in nanowire tunnel FETs. Nanotechnology, 32(15), 150001. (doi: 10.1088/1361-6528/abd125) (PMID:33285530)

Medina-Bailon, C., Dutta, T. , Adamu-Lema, F., Rezaei, A., Nagy, D. , Georgiev, V. P. and Asenov, A. (2020) Nano-electronic simulation software (NESS): a novel open-source TCAD simulation environment. Journal of Microelectronic Manufacturing, 3(4), 20030407. (doi: 10.33079/jomm.20030407)

Berrada, S., Carrillo-Nunez, H., Lee, J., Medina Bailon, C., Dutta, T. , Badami, O., Adamu-Lema, F., Thirunavukkarasu, V., Georgiev, V. and Asenov, A. (2020) Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform. Journal of Computational Electronics, 19, pp. 1031-1046. (doi: 10.1007/s10825-020-01519-0)

Badami, O., Sadi, T., Adamu-Lema, F., Lapham, P., Mu, D., Nagy, D. , Georgiev, V. , Ding, J. and Asenov, A. (2020) A Kinetic Monte Carlo study of retention time in a POM molecule-based flash memory. IEEE Transactions on Nanotechnology, 19, pp. 704-710. (doi: 10.1109/TNANO.2020.3016182)

Carrillo-Nuñez, H., Medina-Bailón, C., Georgiev, V. P. and Asenov, A. (2020) Full-band quantum transport simulation in presence of hole-phonon interactions using a mode-space k·p approach. Nanotechnology, 32(2), 020001. (doi: 10.1088/1361-6528/abacf3) (PMID:32759487)

McGhee, J. and Georgiev, V. P. (2020) Simulation study of surface transfer doping of hydrogenated diamond by MoO₃ and V₂O₅ metal oxides. Micromachines, 11(4), 433. (doi: 10.3390/mi11040433)

Medina-Bailon, C., Carrillo-Nunez, H., Lee, J., Sampedro, C., Padilla, J. L., Donetti, L., Georgiev, V. , Gamiz, F. and Asenov, A. (2020) Quantum enhancement of a S/D tunneling model in a 2D MS-EMC nanodevice simulator: NEGF comparison and impact of effective mass variation. Micromachines, 11(2), 204. (doi: 10.3390/mi11020204)

Sadi, T., Badami, O., Georgiev, V. , Ding, J. and Asenov, A. (2019) Physical Insights into the Transport Properties of RRAMs Based on Transition Metal Oxides. In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 4-6 Sept. 2019, ISBN 9781728109404 (doi: 10.1109/SISPAD.2019.8870391)

Carrillo-Nunez, H., Dimitrova, N., Asenov, A. and Georgiev, V. (2019) Machine learning approach for predicting the effect of statistical variability in Si junctionless nanowire transistors. IEEE Electron Device Letters, 40(9), pp. 1366-1369. (doi: 10.1109/LED.2019.2931839)

Lee, J., Lamarche, M. and Georgiev, V. P. (2019) The First-Priniple Simulation Study on the Specific Grain Boundary Resistivity in Copper Interconnects. In: 2018 IEEE 13th Nanotechnology Materials & Devices Conference (NMDC 2018), Portland, OR, USA, 14-17 Oct 2018, ISBN 9781538610169 (doi: 10.1109/NMDC.2018.8605907)

Lee, J., Medina-Bailon, C., Berrada, S., Carrillo-Nunez, H., Sadi, T., Georgiev, V. P. , Nedjalkov, M. and Asenov, A. (2019) A Multi-Scale Simulation Study of the Strained Si Nanowire FETs. In: 2018 IEEE 13th Nanotechnology Materials & Devices Conference (NMDC 2018), Portland, OR, USA, 14-17 Oct 2018, ISBN 9781538610169 (doi: 10.1109/NMDC.2018.8605884)

Lee, J., Badami, O., Carrillo-Nunez, H., Berrada, S., Medina-Bailon, C., Dutta, T. , Adamu-Lema, F., Georgiev, V. P. and Asenov, A. (2018) Variability predictions for the next technology generations of n-type SixGe1-x nanowire MOSFETs. Micromachines, 9(12), 643. (doi: 10.3390/mi9120643)

This list was generated on Sun Dec 5 18:56:53 2021 GMT.