Salter, P. S., Booth, M. J., Courvoisier, A., Moran, D. A.J. and MacLaren, D. A. (2017) High resolution structural characterisation of laser-induced defect clusters inside diamond. Applied Physics Letters, 111(8), 081103. (doi: 10.1063/1.4993118)
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Abstract
Laser writing with ultrashort pulses provides a potential route for the manufacture of three-dimensional wires, waveguides, and defects within diamond. We present a transmission electron microscopy study of the intrinsic structure of the laser modifications and reveal a complex distribution of defects. Electron energy loss spectroscopy indicates that the majority of the irradiated region remains as sp3 bonded diamond. Electrically conductive paths are attributed to the formation of multiple nano-scale, sp2-bonded graphitic wires and a network of strain-relieving micro-cracks.
| Item Type: | Articles |
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| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | MacLaren, Professor Donald and Moran, Professor David |
| Authors: | Salter, P. S., Booth, M. J., Courvoisier, A., Moran, D. A.J., and MacLaren, D. A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering College of Science and Engineering > School of Physics and Astronomy |
| Journal Name: | Applied Physics Letters |
| Publisher: | AIP Publishing |
| ISSN: | 0003-6951 |
| ISSN (Online): | 1077-3118 |
| Copyright Holders: | Copyright © 2017 The Authors |
| First Published: | First published in Applied Physics Letters 111(8):081103 |
| Publisher Policy: | Reproduced under a Creative Commons License |
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