Georgiev, V. P. , Mirza, M. M. , Dochioiu, A.-I., Lema, F.-A., Amoroso, S. M., Towie, E., Riddet, C., MacLaren, D. A. , Asenov, A. and Paul, D. J. (2016) Experimental and Simulation Study of a High Current 1D Silicon Nanowire Transistor Using Heavily Doped Channels. In: 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Toulouse, France, 9-12 Oct 2016, ISBN 9781509043521 (doi: 10.1109/NMDC.2016.7777084)
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Publisher's URL: http://ieeexplore.ieee.org/document/7777084/
Abstract
Silicon nanowires have numerous potential applications, including transistors, memories, photovoltaics, biosensors and qubits [1]. Fabricating a nanowire with the required characteristics for a specific application, however, poses some challenges. For example, a major challenge is that, as the transistors dimensions are reduced, it is difficult to maintain a low off-current (Ioff) whilst simultaneously maintaining a high on-current (Ion). Some sources of this parasitic leakage current include quantum mechanical tunnelling, short channel effects and statistical variability [2, 3]. A variety of new architectures, including ultra-thin silicon-on-insulator (SOI), double gate, FinFETs, tri-gate, junctionless and gate all-around (GAA) nanowire transistors, have therefore been developed to improve the electrostatic control of the conducting channel. This is essential since a low Ioff implies low static power dissipation and it will therefore improve power management in the multi-billion transistors circuits employed globally in microprocessors, sensors and memories.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Towie, Dr Ewan and Mirza, Dr Muhammad M A and MacLaren, Professor Donald and Amoroso, Dr Salvatore and Georgiev, Professor Vihar and Paul, Professor Douglas and Asenov, Professor Asen and Riddet, Mr Craig and Dochioiu, Mr Alexandru-Iusti |
| Authors: | Georgiev, V. P., Mirza, M. M., Dochioiu, A.-I., Lema, F.-A., Amoroso, S. M., Towie, E., Riddet, C., MacLaren, D. A., Asenov, A., and Paul, D. J. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering College of Science and Engineering > School of Physics and Astronomy |
| ISBN: | 9781509043521 |
| Copyright Holders: | Copyright © 2016 IEEE |
| Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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