Process Induced Tensile Strain of Ge on Si Nanopillars by ICP-PECVD SiN Stressor Layers

Millar, R.W., Gallacher, K., Samarelli, A., Dumas, D.C.S., Frigerio, J., Chrastina, D., Isella, G. and Paul, D.J. (2014) Process Induced Tensile Strain of Ge on Si Nanopillars by ICP-PECVD SiN Stressor Layers. In: IEEE 11th International Conference on Group IV Photonics (GFP), Paris, France, 27-29 Aug 2014, pp. 235-236. (doi:10.1109/Group4.2014.6961941)

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Abstract

Silicon nitride stressor layers deposited by inductively coupled plasma-enhanced-chemical-vapor-deposition were used to increase the emission wavelength of germanium nanopillars. These stressors contain less hydrogen than silicon nitride deposited by other techniques, and therefore should provide lower optical loss in strained devices operating near telecoms wavelengths, or in the mid-infrared.

Item Type:Conference Proceedings
Keywords:Integrated optics;Optical films;Optical pumping;Silicon compounds;Strain;Stress
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Millar, Mr Ross and Samarelli, Mr Antonio and Paul, Professor Douglas and Dumas, Dr Derek and Gallacher, Dr Kevin
Authors: Millar, R.W., Gallacher, K., Samarelli, A., Dumas, D.C.S., Frigerio, J., Chrastina, D., Isella, G., and Paul, D.J.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
634451GEMINIDouglas PaulEuropean Commission (EC)613055ENG - ENGINEERING ELECTRONICS & NANO ENG