Dumas, D.C.S., Gallacher, K. , Rhead, S., Myronov, M., Leadley, D.R. and Paul, D.J. (2014) Ge/SiGe quantum confined Stark effect modulators with low voltage swing at lambda = 1550 nm. In: 2014 IEEE 11th International Conference on Group IV Photonics (GFP),, Paris, France, 27-29 Aug 2014, pp. 245-246. (doi: 10.1109/Group4.2014.6961946)
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Publisher's URL: http://dx.doi.org/10.1109/Group4.2014.6961946
Abstract
Low-voltage swing (≤1.0 V) high-contrast ratio (6 dB) electro-absorption modulators covering 1460 to 1560 nm wavelength have been demonstrated using Ge/SiGe quantum confined Stark effect diodes grown on a silicon substrate.
Item Type: | Conference Proceedings |
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Keywords: | Absorption;Current measurement;Modulation;Photoconductivity;Quantum well devices;Silicon germanium;Wavelength measurement |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas and Dumas, Dr Derek and Gallacher, Dr Kevin |
Authors: | Dumas, D.C.S., Gallacher, K., Rhead, S., Myronov, M., Leadley, D.R., and Paul, D.J. |
Subjects: | Q Science > QC Physics |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Research Group: | Semiconductor Devices |
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