Ge/SiGe quantum confined Stark effect modulators with low voltage swing at lambda = 1550 nm

Dumas, D.C.S., Gallacher, K., Rhead, S., Myronov, M., Leadley, D.R. and Paul, D.J. (2014) Ge/SiGe quantum confined Stark effect modulators with low voltage swing at lambda = 1550 nm. In: 2014 IEEE 11th International Conference on Group IV Photonics (GFP),, Paris, France, 27-29 Aug 2014, pp. 245-246. (doi:10.1109/Group4.2014.6961946)

Full text not currently available from Enlighten.

Publisher's URL: http://dx.doi.org/10.1109/Group4.2014.6961946

Abstract

Low-voltage swing (≤1.0 V) high-contrast ratio (6 dB) electro-absorption modulators covering 1460 to 1560 nm wavelength have been demonstrated using Ge/SiGe quantum confined Stark effect diodes grown on a silicon substrate.

Item Type:Conference Proceedings
Keywords:Absorption;Current measurement;Modulation;Photoconductivity;Quantum well devices;Silicon germanium;Wavelength measurement
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas and Dumas, Dr Derek and Gallacher, Dr Kevin
Authors: Dumas, D.C.S., Gallacher, K., Rhead, S., Myronov, M., Leadley, D.R., and Paul, D.J.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices

University Staff: Request a correction | Enlighten Editors: Update this record

Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
523621Room Temperature Terahertz Quantum Cascade Lasers on Silicon SubstratesDouglas PaulEngineering & Physical Sciences Research Council (EPSRC)EP/H02364X/1ENG - ENGINEERING ELECTRONICS & NANO ENG