Experimentally estimated dead space for GaAs and InP based planar Gunn diodes

Maricar, M. I., Khalid, A. , Dunn, G., Cumming, D. and Oxley, C.H. (2015) Experimentally estimated dead space for GaAs and InP based planar Gunn diodes. Semiconductor Science and Technology, 30(1), 012001. (doi: 10.1088/0268-1242/30/1/012001)

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Publisher's URL: http://dx.doi.org/10.1088/0268-1242/30/1/012001


An experimental method has been used to estimate the dead space of planar Gunn diodes which were fabricated using GaAs and InP based materials, respectively. The experimental results indicate that the dead space was approximately 0.23 μm and the saturation domain velocity 0.96 × 105 m s−1 for an Al0.23Ga0.77As based device, while for an In0.53Ga0.47As based device, the dead space was approximately 0.21 μm and the saturation domain velocity 1.93 × 105 m s−1. Further, the results suggest that the saturation domain velocity is reduced or there is an increase in the dead-space due to local field distortions when the active channel length of the planar Gunn diode is less than 1 micron.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Cumming, Professor David and Dunn, Dr Geoffrey and Khalid, Dr Ata-Ul-Habib
Authors: Maricar, M. I., Khalid, A., Dunn, G., Cumming, D., and Oxley, C.H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Semiconductor Science and Technology
Publisher:IOP Publishing
ISSN (Online):1361-6641
Copyright Holders:Copyright © 2015 IOP Publishing
First Published:First published in Semiconductor Science and Technology 30(1):012001
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
497131Novel Thermal Management Concepts: High Power High Frequency Planar Gunn DiodeDavid CummingEngineering & Physical Sciences Research Council (EPSRC)EP/H011862/1ENG - ENGINEERING ELECTRONICS & NANO ENG