Determining the electronic performance limitations in top-down fabricated Si nanowires with mean widths down to 4 nm

Mirza, M. M. , MacLaren, D. A. , Samarelli, A., Holmes, B. M., Zhou, H., Thoms, S. , MacIntyre, D. and Paul, D. J. (2014) Determining the electronic performance limitations in top-down fabricated Si nanowires with mean widths down to 4 nm. Nano Letters, 14(11), pp. 6056-6060. (doi:10.1021/nl5015298)

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Abstract

Silicon nanowires have been patterned with mean widths down to 4 nm using top-down lithography and dry etching. Performance-limiting scattering processes have been measured directly which provide new insight into the electronic conduction mechanisms within the nanowires. Results demonstrate a transition from 3-dimensional (3D) to 2D and then 1D as the nanowire mean widths are reduced from 12 to 4 nm. The importance of high quality surface passivation is demonstrated by a lack of significant donor deactivation, resulting in neutral impurity scattering ultimately limiting the electronic performance. The results indicate the important parameters requiring optimization when fabricating nanowires with atomic dimensions.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Mirza, Dr Muhammad M A and Zhou, Dr Haiping and Paul, Professor Douglas and Thoms, Dr Stephen and Samarelli, Mr Antonio and Holmes, Dr Barry and MacLaren, Dr Donald
Authors: Mirza, M. M., MacLaren, D. A., Samarelli, A., Holmes, B. M., Zhou, H., Thoms, S., MacIntyre, D., and Paul, D. J.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
Research Group:Semiconductor Devices
Journal Name:Nano Letters
Publisher:American Chemical Society
ISSN:1530-6984
ISSN (Online):1530-6992
Copyright Holders:Copyright © 2014 American Chemical Society
First Published:First published in Nano Letters 14(11):6056-6060
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
503291Molecular-Metal-Oxide-nanoelectronicS (M-MOS): Achieving the Molecular LimitLeroy CroninEngineering & Physical Sciences Research Council (EPSRC)EP/H024107/1CHEM - CHEMISTRY