Quantum transport of a nanowire field-effect transistor with complex phonon self–energy

Valin, R., Aldegunde, M., Martinez, A. and Barker, J.R. (2014) Quantum transport of a nanowire field-effect transistor with complex phonon self–energy. Journal of Applied Physics, 116(8), 084507. (doi: 10.1063/1.4894066)

Full text not currently available from Enlighten.


In this work, the impact of the real part of the phonon self-energy on the transfer characteristics of a silicon nanowire transistor is investigated. The physical effects of the real part of the self-energy are to create a broadening and a shift on the density of states. This increases the drain current in the sub–threshold region and decreases it in the above–the–threshold region. In the first region, the current is increased as a result of an increase of charge in the middle of the channel. In the second one, the electrostatic self–consistency or the enforcement of charge neutrality in the channel reduces the current because a substantial amount of electrons are under the first subband and have imaginary wave vectors. The change in the phonon–limited mobility due to the real part of self–energy is evaluated for a nanowire transistor and a nanowire in which there is not source to drain barrier. We also assess the validity of Mathiessen's rule using the self–consistent NEGF simulations and the Kubo–Greenwood formalism.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Barker, Professor John and Martinez, Dr Antonio
Authors: Valin, R., Aldegunde, M., Martinez, A., and Barker, J.R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Applied Physics
Publisher:American Institute of Physics
ISSN (Online):1089-7550

University Staff: Request a correction | Enlighten Editors: Update this record

Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
530471Quantum Transport Simulations of Next Generation Field Effect TransistorsAntonio MartinezEngineering & Physical Sciences Research Council (EPSRC)EP/I004084/1ENG - ENGINEERING ELECTRONICS & NANO ENG