Piezoelectric polymer oxide semiconductor field effect transistor (POSFET) devices for touch sensing

Dahiya, R. S. , Metta, G. and Valle, M. (2009) Piezoelectric polymer oxide semiconductor field effect transistor (POSFET) devices for touch sensing. In: 2nd International Workshop on Electron Devices and Semiconductor Technology, 2009. IEDST '09, Mumbai, India, 1-2 Jun 2009, pp. 1-5. (doi:10.1109/EDST.2009.5166118)

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Publisher's URL: http://dx.doi.org/10.1109/EDST.2009.5166118

Abstract

This work presents the POSFET based touch sensing devices and their experimental evaluation. POSFET touch sensing devices presented here are primarily developed for the robotic applications. The design of these devices is inspired from human sense of touch. These devices are implemented by spin coating thin (~2.5 mum) piezoelectric polymer (PVDF-TrFE) film, directly on to the gate area of MOS transistor. The polymer film is processed in situ. The POSFET device represents an integral ldquosensotronicrdquo unit comprising of transducer and the transistor and are thus capable of dasiasensing and processing at same sitepsila. The POSFET touch sensing devices are tested in a wide range (0.15-5N) of dynamic normal forces and at different frequencies.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Dahiya, Professor Ravinder
Authors: Dahiya, R. S., Metta, G., and Valle, M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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