Photoluminescence spectroscopy investigations of Si-doped InP nanowires fabricated by selective-area metalorganic vapor phase epitaxy

Ding, Y., Motohisa, J. and Fukui, T. (2007) Photoluminescence spectroscopy investigations of Si-doped InP nanowires fabricated by selective-area metalorganic vapor phase epitaxy. In: IEEE 19th International Conference on Indium Phosphide & Related Materials (IPRM '07), Matsue, Japan, 14-18 May 2007, pp. 443-444. (doi: 10.1109/ICIPRM.2007.381220)

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Publisher's URL: http://dx.doi.org/10.1109/ICIPRM.2007.381220

Abstract

Si-doped InP NWs were successfully fabricated by SA-MOVPE. PL measurements were carried out on Si-doped InP NWs. From the PL peak position caused by band-filling effect, we estimated the electron concentration in Si-doped InP NWs.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Ding, Dr Ying
Authors: Ding, Y., Motohisa, J., and Fukui, T.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:1092-8669

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