Metamorphosis of a nanowire: a 3-D coupled mode space NEGF study

Amoroso, S., Georgiev, V. , Towie, E., Riddet, C. and Asenov, A. (2014) Metamorphosis of a nanowire: a 3-D coupled mode space NEGF study. In: 2014 International Workshop on Computational Electronics (IWCE), Paris, France, 3-6 June 2014, pp. 1-4. (doi: 10.1109/IWCE.2014.6865854)

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Publisher's URL: http://dx.doi.org/10.1109/IWCE.2014.6865854

Abstract

In this paper we present a 3D coupled mode space NEGF study of the quantum features of a nanoscale Gate-All- Around (GAA) silicon transistor. The bottom oxide of the structure is parameterized in order to progressively transform the nanowire in a tri-gate FinFET and the electron transport studied for several Fin widths, back-biases voltages and electron effective masses. Moreover, we address in detail the treatment of the boundary conditions at the channel interface to model the wave function penetration into the gate oxide. We report quantitative results of the charge density obtained by a simplified and a complete discretization approach.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Towie, Dr Ewan and Amoroso, Dr Salvatore and Georgiev, Dr Vihar and Asenov, Professor Asen and Riddet, Mr Craig
Authors: Amoroso, S., Georgiev, V., Towie, E., Riddet, C., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2014 The Authors
Publisher Policy:Reproduced with the permission of the authors.

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