Amoroso, S., Georgiev, V. , Towie, E., Riddet, C. and Asenov, A. (2014) Metamorphosis of a nanowire: a 3-D coupled mode space NEGF study. In: 2014 International Workshop on Computational Electronics (IWCE), Paris, France, 3-6 June 2014, pp. 1-4. (doi: 10.1109/IWCE.2014.6865854)
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98649.pdf - Accepted Version 3MB |
Publisher's URL: http://dx.doi.org/10.1109/IWCE.2014.6865854
Abstract
In this paper we present a 3D coupled mode space NEGF study of the quantum features of a nanoscale Gate-All- Around (GAA) silicon transistor. The bottom oxide of the structure is parameterized in order to progressively transform the nanowire in a tri-gate FinFET and the electron transport studied for several Fin widths, back-biases voltages and electron effective masses. Moreover, we address in detail the treatment of the boundary conditions at the channel interface to model the wave function penetration into the gate oxide. We report quantitative results of the charge density obtained by a simplified and a complete discretization approach.
Item Type: | Conference Proceedings |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Towie, Dr Ewan and Amoroso, Dr Salvatore and Georgiev, Professor Vihar and Asenov, Professor Asen and Riddet, Mr Craig |
Authors: | Amoroso, S., Georgiev, V., Towie, E., Riddet, C., and Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Copyright Holders: | Copyright © 2014 The Authors |
Publisher Policy: | Reproduced with the permission of the authors. |
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