3D Multi-Subband Ensemble Monte Carlo Simulator of FinFETs and nanowire transistors

Georgiev, V. , Amoroso, S. and Asenov, A. (2014) 3D Multi-Subband Ensemble Monte Carlo Simulator of FinFETs and nanowire transistors. In: 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan, 9-11 Sep 2014,

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Abstract

In this paper we present the development of a 3D Multi Subband Ensemble Monte Carlo (3DMSB-EMC) tool targeting the simulation of nanoscaled FinFETs and nanowire transistors. In order to deliver computational efficiency, we have developed a self-consistent framework that couples a MSB- EMC transport engine for a 1D electron gas with a 3DPoisson- 2DSchro ̈dinger solver. Here we use a FinFET with a physical channel length of 15nm as an example to demonstrate the appli- cability and highlight the benefits of the simulation framework. A comparison of the 3DMSB-EMC with Non-Equilibrium Green’s Functions (NEGFs) in the ballistic limit is used to verify and validate our approach.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Amoroso, Dr Salvatore and Georgiev, Dr Vihar and Asenov, Professor Asen
Authors: Georgiev, V., Amoroso, S., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:device modelling group
Copyright Holders:Copyright © 2014 The Authors
Publisher Policy:Reproduced with the permission of the authors.
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